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Suggested Citation:"REFERENCES." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
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Page 39
Suggested Citation:"REFERENCES." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
×
Page 40

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HETEROGENEOUS PROCESSES 39 REFERENCES 1. M.W. Chase, Jr., C.A. Davies, J.R. Downey, Jr., D.J. Frurip, R.A. McDonald, and A.N. Syverud, JANAF Thermochemical Tables, 3rd edn., J. Phys. Chem. Ref. Data, suppl. 1 (1985). 2. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992). 3. K. Ono, T. Oomori, M. Tuda, and K. Namba, J. Vac. Sci. Technol. A 10:1071 (1992); C.C. Cheng, K.V. Guinn, V.M. Donnelly, and I.P. Herman, "In Situ Pulsed Laser-Induced Desorption Studies of the Silicon Chloride Layer During Silicon Etching in High Density Plasmas of C12/O2," J. Vac. Sci. Technol. A 12:2630 (1994); M. Hayerlag, G.S. Oehrlein, and D. Vender, "Sidewall Passivation During the Etching of poly-Si in an Electron-Cyclotron-Resonance-Plasma of HBr," J. Vac. Sci. Technol. B 12:96 (1994). 4. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992); J.W. Butterbaugh, D.C. Gray, and H.H. Sawin, J. Vac. Sci. Technol. B 9:1461 (1991); G.S. Oehrlein, Y. Zhang, D. Vender, and O. Joubert, "Fluorocarbon High Density Plasmas II: Silicon Dioxide and Silicon Etching Using CF4 and CHF3," J. Vac. Sci. Technol. A 12:333 (1994); S. Samukawa and K. Terada, J. Vac. Sci. Technol. B 12:3300 (1994); M.J. Goeckner, M.A. Henderson, J.A. Meyer, and R.A. Breun, J. Vac. Sci. Technol. A 12:3120 (1994). 5. S.M. Hart and E.S. Aydil, "Study of Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of SiO2 from SiH4, O2, and Ar Plasma," J. Vac. Sci. Technol. A 14:2062 (1996). 6. E.R. Fisher, P. Ho, W.G. Breiland, and R.J. Buss, J. Phys. Chem . 96:9855 (1992). 7. G.S. Oehrlein, J.F. Rembetski, and E.H. Payne, J. Vac. Sci. Technol. B 8:1199 (1990). 8. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992). 9. K.P. Giapis, T.A. Moore, and T.K. Minton, "Hyperthermal Neutral Beam Etching," J. Vac. Sci. Technol. A 13:959 (1995). 10. S. Tachi, K. Tsujimoto, and S. Okudaira, "Low-Temperature Reactive Ion Etching and Microwave Plasma Etching of Silicon," Appl. Phys. Lett. 52:616 (1988). 11. A. Szabo and T. Engel, J. Vac. Sci. Technol. A 12:648 (1994). 12. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992). 13. A.M. Barklund and H.O. Blom, J. Vac. Sci. Technol. A 11:1226 (1993). 14. B.J. Garrison, "Molecular Dynamics Simulation of Surface Reactions," Chemical Society Reviews 21:155 (1992); H. Feil, J. Dieleman, and B.J. Garrison, J. Appl. Phys. 74:1303 (1993); M.E. Barone and D.B. Graves, J. Appl. Phys. 77:1263 (1995).

HETEROGENEOUS PROCESSES 40

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In spite of its high cost and technical importance, plasma equipment is still largely designed empirically, with little help from computer simulation. Plasma process control is rudimentary. Optimization of plasma reactor operation, including adjustments to deal with increasingly stringent controls on plant emissions, is performed predominantly by trial and error. There is now a strong and growing economic incentive to improve on the traditional methods of plasma reactor and process design, optimization, and control. An obvious strategy for both chip manufacturers and plasma equipment suppliers is to employ large-scale modeling and simulation. The major roadblock to further development of this promising strategy is the lack of a database for the many physical and chemical processes that occur in the plasma. The data that are currently available are often scattered throughout the scientific literature, and assessments of their reliability are usually unavailable.

Database Needs for Modeling and Simulation of Plasma Processing identifies strategies to add data to the existing database, to improve access to the database, and to assess the reliability of the available data. In addition to identifying the most important needs, this report assesses the experimental and theoretical/computational techniques that can be used, or must be developed, in order to begin to satisfy these needs.

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