Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics (2000) / Chapter Skim
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Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics
Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics
Pages 3-11
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From page 3... ...
We will examine the structures, how they are grown, and how they are being used for new light sources and high-speed electronics. We will then look at newly developed epitaxial structures, including quantum wires, quantum dots, and new materials for application to terahertz-frequency technology and nanometerscale microelectromechanical systems.
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Today, quantum well lasers are the standard commercial semiconductor lasers and are used in applications as varied as fiberoptic communication; laser printing; materials processing; compact disc, CD-ROM, and digital video disc data storage; scientific instruments; optical pumping; medical treatment; and pointing and alignment. Recently developed quantum well lasers formed with gallium nitride epitaxy produce blue and white light previously impossible to produce with semiconductor devices.
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t71. The fractional quantum Hall effect results from interactions among electrons at low temperatures in high magnetic fields, where all electrons in a two-dimensional electron gas lie in the lowest Landau level.
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The terraced surfaces can be produced by cutting a substrate wafer from a bulk crystal at a slight angle relative to the principal crystal axes of the bulk crystal. Epitaxial growth on such a surface typically proceeds by migration of the adatoms across the crystal terraces to incorporate at the step edges that occur between the terraces.
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Gossard, "The Coulomb Blockade in Coupled Quantum Dots," Science, November 22, 1996, Vol.
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Annealing the material leads to diffusion of the excess arsenic to form metallic arsenic nanoparticles with diameter approximately 10 nanometers. The composite GaAs-As semiconductor-metal material can be applied to growing nonconductive insulation layers for application in field effect transistors to isolate semiinsulating substrates from transistor channel layers.
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This is particularly significant because of the absence of other viable semiconductor technologies for sources in the terahertz frequency region. Sources employing metallic nanoparticle composites of erbium arsenide (ErAs)
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The field can accumulate or deplete electrons beneath a surface gate and thus turn on or off the field effect transistor. These self-sensing cantilevers show sensitivity comparable to the more conventional cantilever arrangements based on deflection of a laser beam reflected from the cantilever surface that are presently used in most atomic force microscopes t201.
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From page 11... ...
GaAs/AlGaAs self-sensing cantilevers forlow temperature scanning probe microscopy. Applied Physics Letters, 24 Aug.
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