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9. Microelectronics
Pages 277-286

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From page 277...
... 9 Microelectronics 277
From page 278...
... Thompson, Ultratech Stepper, Inc. Iwona Turlik, Motorola Advanced Technology Center Subm~tted for the panel by its Chair, Lou Ann Heimbrook, this assessment of the fiscal year 2001 NIST activities in m~croelectronics is based on a formal meeting of the panel on April 19-20, 2001, in Gaithersburg, Md., and on documents provided by NIST.~ 1U.S.
From page 279...
... The panel was charged with assessing the quality of microelectronics programs within the NIST laboratories, with a focus on the following tasks: · Describing the range of microelectronics programs within the NIST laboratories; · Evaluating the technical quality of the microelectronics programs; · Evaluating the relevance and effectiveness of the criteria NIST uses to determine which projects and programs are included in the microelectronics portfolio; · Evaluating how microelectronics programs and projects are coordinated across NIST to ensure synergy and avoid redundancy; · Evaluating the adequacy of NIST human resources, equipment, and facilities for the goals of the microelectronics programs, with particular attention to the challenges of refreshing skill sets and equipment in a rapidly changing field; · Evaluating how effectively NIST coordinates the microelectronics programs with customer needs in industry, government, and academia, including how NIST: Gathers and uses information on customer needs; Disseminates outputs and results from the microelectronics programs; and Gathers and uses customer feedback on the effectiveness and relevance of NIST programs in microelectronics; · Evaluating how effectively current NIST programs in microelectronics meet industry needs, including the timeliness of NIST products and results in this rapidly changing field; and · Evaluating how effectively NIST balances shorter-term customer needs and longer-term needs. DESCRIPTION OF THE NIST MICROELECTRONICS PROGRAM NIST presented the panel with a portfolio of ongoing projects that have the microelectronics industry as a primary or secondary customer.
From page 280...
... The resulting eight program areas are Lithography Metrology, Critical Dimension and Overlay Metrology, Thin Film and Shallow Junction Metrology, Interconnect and Packaging Metrology, Wafer Characterization and Process Metrology, Modeling and Design Metrology, Test Metrology, and Manufacturing Support. Table 9.1 lists the eight program areas and the projects in each.
From page 281...
... MICROELECTRONICS TABLE 9.1 Program Areas and Ongoing Projects of the NIST Microelectronics Program 281 Program Area Project Participating Laboratory Lithography Metrology Metrology supporting deep ultraviolet PL, KEEL lithography Metrology supporting extreme ultraviolet MEL, PL lithography Lithographic polymers MSEL Critical Dimension and Overlay Metrology Atom-based dimensional metrology MEL Scanning electron microscope-based dimensional MEL metrology Optical-based dimensional metrology Scanning probe microscope-based dimensional metrology MEL MEL Electrical-based dimensional KEEL metrology Model-based dimensional metrology MEL Thin Film and Shallow Junction Two- and three-dimensional profiling MEL, CSTL Metrology Advanced gate dielectric metrology MEL, MSEL, CSTL Ultrashallow depth profiling by ToF-SIMS CSTL Nuclear measurement methods for chemical CSTL characterization of As and P implant standards Boron and nitrogen thin film and implant standards using neutron depth profiling Effects of elastic-electron scattering on measurements of silicon dioxide film thickness by x-ray photoelectron spectroscopy Monte Carlo methods for optimizing the quantitative analysis of thin layers, microparticles, and irregular surfaces Phase identification from sub-200 nm CSTL CSTL CSTL CSTL particles by electron backscatter diffraction Thin film metrology using x-rays PL Optical metrology of the Si/dielectric interface PL Interconnect and Packaging Measurements and modeling for MSEL, CSTL Metrology electrodeposited interconnects Interconnect materials and reliability MSEL, MEL metrology Porous thin film metrology for low-k dielectrics MSEL Interconnect dielectric characterization using KEEL transmission-line measurement X-ray tomography of microstructures PL Solders and solderability measurements for MSEL microelectronics Wire bonding to Cu/low-k semiconductor devices Tin whisker mechanisms KEEL, MSEL MSEL (continuesJ
From page 282...
... 282 TABLE 9.1 Continued AN ASSESSMENT OF THE NIST MEASUREMENT AND STANDARDS LABORATORIES: FY 2001 Program Area Project Participating Laboratory Wafer level underfill experiment and modeling Solder interconnect design X-ray studies of electronic materials Packaging reliability Permittivity of polymer films in the microwave range Texture measurements in thin film electronic materials Ferroelectric domain stability measurements Wafer Characterization and Process Metrology Wafer and chuck flatness metrology Modeling and measurements of particles High-resolution microcalorimeter x-ray spectrometer for chemical analysis Thermophysical properties of gases used in semiconductor processing Models and data for chemical vapor deposition Temperature measurements and standards for rapid thermal processing Standards for low concentrations of water vapor in gases Plasma process metrology Development of quantitative measurements for vacuum process control Modeling and Design Metrology Metrology for simulation and computer-aided KEEL design Nonlinear device metrology and modeling KEEL Test Metrology At-speed test of digital integrated circuits KEEL Measurements for complex electronic systems KEEL Manufacturing Support NIST/SEMATECH engineering statistics ITL Internet handbook MSEL MSEL MSEL MSEL MSEL MSEL MSEL MEL PL, BFRL KEEL CSTL CSTL MEL, CSTL, PL CSTL KEEL, CSTL, PL CSTL · Development of measurement tools needed to develop lead-free solders for use in harsh environments; · Development of an SRM artifact to standardize two-dimensional measurements in the semiconductor industry regardless of instrument used; · Development of reference artifacts to enable high-accuracy dimensional measurements using scanning electron microscopy; · Development of measurement tools and models to characterize and enable electrodeposited copper interconnects with appropriate (superconformal) feature fill; and
From page 283...
... While recognizing that the bottom-up viewpoint is valuable and must never be lost, the panel notes that lack of an integrated view or a higher-level strategic plan is limiting the effectiveness of some projects. For example, the microelectronics program includes separate projects on the use of x-ray techniques and ellipsometry for thin film metrology, but it is not poised to produce an integrated set of recommendations on thin film measurement techniques.
From page 284...
... Where in-depth discussions on a topic are necessary, NIST has organized workshops. Recent workshops include "Mass Flow Measurement and Control for the Semiconductor Industry" and "Issues Related to Scanning Surface Inspection Systems Calibration with Polystyrene Spheres." Where no established forum for dialogue exists for example, rapid thermal processing, plasma processing, particle characterization, and wafer metrology NIST has convened common interest groups.
From page 285...
... Customer feedback on projects and the overall program should be included in the information gathering, management, and review process suggested above. Effectiveness of the Current Program Portfolio The panel received technical presentations in five of the eight program areas: Lithography Metrology, Critical Dimension and Overlay Metrology, Thin Film and Shallow Junction Metrology, Interconnect and Packaging Metrology, and Wafer Characterization and Process Metrology.
From page 286...
... Good coordination was also observed in advanced gate dielectric research, where KEEL is developing reliability measurement models and ellipsometry techniques, and CSTL is examining structure and composition using its expertise in transmission electron microscopy, grazing incidence x-ray photoelectron spectroscopy, electron probe microanalysis, and secondary-ion mass spectroscopy. However, the panel also notes areas where there could be better coordination and impact.


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