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Materials for High-Temperature Semiconductor Devices (1995) / Chapter Skim
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Appendix A: Silicon as a High-Temperature Material
Pages 81-86

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From page 81...
... The changes in bipolar component characteristics mentioned 81 above can be so great with respect to temperature that conventional design methods cannot be used; in fact, design compensation techniques may be only valid for limited temperature ranges. Leakage currents must be compensated for in all designs; for example, the basecollector leakage current, ICbo, flows in the opposite direction to the normal base current and can become larger than the normal base current as operating temperatures increase, reducing the base current necessary to sustain collector current.
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From page 82...
... Cascading of n- and p-MOSFETs to a common circuit node allows the leakage currents from the drain to body of the n-MOS and the source to body of the p-MOS to cancel each other with appropriate selection of MOSfeature sizes. For the differential input stage, a compensation diode can be placed at any node where the use of cascaded MOS pairs is not possible; the diode can then be used to shunt excess current to one of the power rails (Shoucair, 19861.
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From page 83...
... The wafer-bonding process also facilitates the fabrication of SOI wafers with very thick buried oxide layers. The high-quality silicon films and thick oxides generally make wafer bonding a good technology for high-performance bipolar applications.
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From page 84...
... APPLICATIONS TO DEVICE TECHNOLOGY P Bipolar-Junction-Transistor Applications in SOI Technology Recently, lateral n-p-n bipolar transistors have been fabricated using SIMOX SOI substrates. The bipolar structures were investigated for high-frequency and smartpower applications and no high-temperature tests were mentioned, although the benefits of dielectric isolation with respect to higher integration density, no latchup, less leakage current, high-temperature operation, and noise immunity were mentioned (Weyers et al., 1992; Parke et al., 1993)
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From page 85...
... Linear products in development for high-temperature testing include operational amplifiers, analog switches, voltage references, and application-specific integrated circuits. REFERENCES Beasom, J.D., and R.B.
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Key Terms

  • leakage current
  • silicon film
  • integrated circuits
  • dielectric isolation
  • base current

  • design techniques
  • wafer bonding
  • bonded wafer
  • ieee transactions
  • ibis technology

  • operational amplifiers
  • buried oxide
  • analog cmos
  • bipolar transistors
  • operational amplifier

  • soi substrates
  • oxide layer
  • power rails
  • digital products
  • circuit design

  • output stage
  • silicon films
  • manufacturing technology
  • temperature electronics
  • compensation techniques

  • film thickness
  • electronics conference
  • normal base
  • oxide layers
  • temperature range


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