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Appendix B: Gallium Arsenide as a High Temperature Material
Pages 87-92

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From page 87...
... Unlike emerging SiC technology, existing GaAs material and fabrication technology is currently able to produce integrated digital, analog, microwave, and opto-electronic circuits. The hightemperature potential of GaAs-based integrated circuit technologies is reviewed in this appendix.
From page 88...
... These MESFETs were fabricated with a tungsten nitride gate and AuGe/Ni/Au ohmic contacts. Their experimental data suggest that while GaAs MESFETs generally exhibit degradation mechanisms similar to those of silicon MOSFETs at elevated temperatures, they incur several additional effects that include (1)
From page 89...
... Figure B-3 shows the structure of an ohmic contact Conventional Recess Gate Au/Ge Ohmic Ti/Pt/Au Gate \ Low deposition temp SiN passivation Mesa isolation after deposition. A simple operational amplifier constructed with these MESFETs functioned at 300 °C (Bottner et al., 1991; Schweeger et al., 19911.
From page 90...
... , and the off-current reduced to approximately half of the gate leakage current. Figure B-7 shows the I-V characteristics for the typical high-temperature MESFET at 350 °C (Reston et al., 19941.
From page 91...
... 1992. Compound semiconductor devices for operation at elevated temperatures.
From page 92...
... 1994. High temperature stability of refractory-metal VLSI GaAs MESFETs.


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