Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. https://doi.org/10.17226/5023.
|State of the Art of Wide Bandgap Materials||15-30|
|Device Physics: Behavior at Elevated Temperatures||31-38|
|Generic Technical Issues Associated with Materials for High-Temperatures...||39-50|
|High-Temperature Electronic Packaging||51-60|
|Device Testing for High-Temperature Electronic Materials||61-64|
|Conclusions and Recommendations||65-70|
|Appendix A: Silicon as a High-Temperature Material||81-86|
|Appendix B: Gallium Arsenide as a High Temperature Material||87-92|
|Appendix C: High-Temperature Microwave Devices||93-118|
|Appendix D: Biographical Sketches of Committee Members||119-120|
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